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[IEEE 2003 8th International Symposium on Plasma- and Process-Induced Damage - Corbeil-Essonnes, France (24-25 April 2003)] 2003 8th International Symposium Plasma- and Process-Induced Damage. - Investigation of gate oxide quality as a function of downstream plasma exposure during flash memory fabrication

✍ Scribed by Giancaterina, S.; Rebrasse, J.-P.; Lecohier, B.; Keller, O.; Martinetti, M.; Rounds, S.

Book ID: 126670037
Publisher: IEEE
Year: 2003
Weight: 415 KB
Category: Article
ISBN-13: 9780780377479
DOI: 10.1109/PPID.2003.1200931

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