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[IEEE 2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, USA (11-13 June 2002)] 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303) - Characteristics and device design of sub-100 nm strained Si N- and PMOSFETs

✍ Scribed by Rim, K.; Chu, J.; Chen, H.; Jenkins, K.A.; Kanarsky, T.; Lee, K.; Mocuta, A.; Zhu, H.; Roy, R.; Newbury, J.; Ott, J.; Petrarca, K.; Mooney, P.; Lacey, D.; Koester, S.; Chan, K.; Boyd, D.; Ieong, M.; Wong, H.-S.

Book ID: 126642508
Publisher: IEEE
Year: 2002
Weight: 279 KB
Category: Article
ISBN-13: 9780780373129
DOI: 10.1109/VLSIT.2002.1015406

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