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[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Wafer level forward current reliability analysis of 120GHz production SiGe HBTs under accelerated current stress

✍ Scribed by Rieh, J.-S.; Watson, K.; Guarin, F.; Yang, Z.; Wang, P.-C.; Joseph, A.; Freeman, G.; Subbanna, S.

Book ID: 126681154
Publisher: IEEE
Year: 2002
Weight: 437 KB
Category: Article
ISBN-13: 9780780373525
DOI: 10.1109/RELPHY.2002.996633

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