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[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Gate oxide reliability of drain-side stresses compared to gate stresses

✍ Scribed by Dumin, N.A.; Kaiping Liu, ; Shyh-Horng Yang,

Book ID: 118021820
Publisher: IEEE
Year: 2002
Weight: 410 KB
Volume: 0
Category: Article
ISBN-13: 9780780373525
DOI: 10.1109/relphy.2002.996612

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