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[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Effects of Fowler Nordheim tunneling stress vs. Channel Hot Electron stress on data retention characteristics of floating gate non-volatile memories

✍ Scribed by Suhail, M.; Harp, T.; Bridwell, J.; Kuhn, P.J.

Book ID: 126611956
Publisher: IEEE
Year: 2002
Weight: 148 KB
Category: Article
ISBN-13: 9780780373525
DOI: 10.1109/RELPHY.2002.996685

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