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[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Electromigration threshold length effect in dual damascene copper-oxide interconnects

✍ Scribed by Arnaud, L.

Book ID: 126611955
Publisher: IEEE
Year: 2002
Weight: 156 KB
Category: Article
ISBN-13: 9780780373525
DOI: 10.1109/RELPHY.2002.996682

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