𝔖 Bobbio Scriptorium

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[IEEE 2002 IEEE International Reliability Physics Symposium Proceedings. 40th Annual - Dallas, TX, USA (7-11 April 2002)] 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) - Cause of data retention loss in a nitride-based localized trapping storage flash memory cell

✍ Scribed by Tsai, W.J.; Gu, S.H.; Zous, N.K.; Yeh, C.C.; Liu, C.C.; Chen, C.H.; Tahui Wang, ; Pan, S.; Chih-Yuan Lu,

Book ID: 125840403
Publisher: IEEE
Year: 2002
Weight: 434 KB
Category: Article
ISBN-13: 9780780373525
DOI: 10.1109/RELPHY.2002.996607

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