✦ LIBER ✦

[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - Dual polycide gate and dual buried contact technologies achieving a 0.4 μm nMOS/pMOS spacing for a 7.65 μm/sup 2/ full-CMOS SRAM cell

✍ Scribed by Koike, H.; Unno, Y.; Ishimaru, K.; Matsuoka, F.; Kakumu, M.

No coin nor oath required. For personal study only.

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