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[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - A 0.05 μm-CMOS with ultra shallow source/drain junctions fabricated by 5 keV ion implantation and rapid thermal annealing

✍ Scribed by Hori, A.; Nakaoka, H.; Umimoto, H.; Yamashita, K.; Takase, M.; Shimizu, N.; Mizuno, B.; Odanaka, S.


Book ID
126604331
Publisher
IEEE
Year
1994
Weight
342 KB
Category
Article
ISBN-13
9780780321113

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