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[IEEE 11th International Conference on Ion Implantation Technology - Austin, TX, USA (16-21 June 1996)] Proceedings of 11th International Conference on Ion Implantation Technology - Charging characteristics of high dose source implants of DMOS devices

✍ Scribed by Chen, K.; Tai, S.; Chang, M.; Ng, D.; Pitzer, D.; Tong, T.

Book ID: 125467183
Publisher: IEEE
Year: 1997
Weight: 420 KB
Category: Article
ISBN-13: 9780780332898
DOI: 10.1109/iit.1996.586132

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