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Identification of a Three-Site Defect in Semi-Insulating 4H-SiC

✍ Scribed by N. Y. Garces; W. E. Carlos; E. R. Glaser; M. A. Fanton

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Evolution of Deep Defect Centers in Semi

✍ S.I. Maximenko; J.A. Freitas; N.Y. Garces; E.R. Glaser; M.A. Fanton 📂 Article 📅 2008 🏛 Springer US 🌐 English ⚖ 256 KB

Behaviour of defects in semi-insulating

✍ N.Y. Garces; E.R. Glaser; W.E. Carlos; M.A. Fanton 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 260 KB

Effects of high-temperature annealing on

✍ D. Alvarez; V. V. Konovalov; M. E. Zvanut 📂 Article 📅 2003 🏛 Springer US 🌐 English ⚖ 86 KB

A Study of Deep Defect Levels in Semi-In

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Optical and magnetic resonance signature

✍ W.E Carlos; E.R Glaser; B.V Shanabrook 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 203 KB

Identification of divacancies in 4H-SiC

✍ N.T. Son; T. Umeda; J. Isoya; A. Gali; M. Bockstedte; B. Magnusson; A. Ellison; 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 217 KB