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Identification of a Mobility-Limiting Scattering Mechanism in Modulation-Doped Si/SiGe Heterostructures

โœ Scribed by Ismail, K.; LeGoues, F. K.; Saenger, K. L.; Arafa, M.; Chu, J. O.; Mooney, P. M.; Meyerson, B. S.

Book ID
120819147
Publisher
The American Physical Society
Year
1994
Tongue
English
Weight
451 KB
Volume
73
Category
Article
ISSN
0031-9007

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Annealing effects on mobility-limiting m
Annealing effects on mobility-limiting mechanisms in modulation doping Si/Si0.8Ge0.2heterostructures
โœ T. Ueno; A. Yutani; Y. Shiraki; K. Nakagawa ๐Ÿ“‚ Article ๐Ÿ“… 1999 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 68 KB

The changes in the mobility and carrier concentration in annealed modulation doping Si/Si 0.8 Ge 0.2 heterostructures with various channel thicknesses have been studied and mobility-limiting mechanisms were clarified. The dominant scattering mechanism was found to change to scattering due to uniform