Hydrogen induced positive charging of buried SiO2
β Scribed by K. Vanheusden; A. Stesmans
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 319 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0167-9317
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π SIMILAR VOLUMES
Positive charging of thermal SiO layers on (100)Si related to injection of protons is compared to the hole trapping. 2 Proton trapping has initial probability close to 100% and shows little sensitivity to the annealing-induced oxygen deficiency of SiO . In contrast, the hole trapping in as-grown Si
There are at least two ways of creating positive charges in the oxide: hole trapping and the formation of positive hydrogenous species. This paper investigates the relation between these two methods. The issues addressed include whether hole traps assist in the generation of hydrogenous positive cha
We have investigated electrical stress-induced positive charge buildup in a hafnium aluminate (HfAlO)/ silicon dioxide (SiO 2 ) dielectric stack (equivalent oxide thickness = 2.63 nm) in metal-oxide-semiconductor (MOS) capacitor structures with negative bias on the TaN gate. Various mechanisms of po