✦ LIBER ✦

Hot-hole-induced degradation in polycrystalline silicon thin-film transistors: experimental and theoretical analysis

✍ Scribed by Pecora, A.; Tallarida, G.; Fortunato, G.; Mariucci, L.; Reita, C.; Migliorato, P.

Book ID: 114447428
Publisher: The Institution of Electrical Engineers
Year: 1994
Tongue: English
Weight: 387 KB
Volume: 141
Category: Article
ISSN: 1350-2409
DOI: 10.1049/ip-cds:19949829

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

An investigation of drain pulse induced

An investigation of drain pulse induced hot carrier degradation in n-type low temperature polycrystalline silicon thin film transistors

✍ Meng Zhang; Mingxiang Wang 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 507 KB

Hot carrier effects in polycrystalline s

Hot carrier effects in polycrystalline silicon thin-film transistors: analysis of electrical characteristics and noise performance modifications

✍ L Mariucci; A Pecora; S Giovannini; R Carluccio; F Massussi; G Fortunato 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 666 KB

Hot carrier effects in n-channel polycry

Hot carrier effects in n-channel polycrystalline silicon thin-film transistors: a correlation between off-current and transconductance variations

✍ Fortunato, G.; Pecora, A.; Tallarida, G.; Mariucci, L.; Reita, C.; Migliorato, P 📂 Article 📅 1994 🏛 IEEE 🌐 English ⚖ 724 KB

Gettering of Ni silicide to minimize the

Gettering of Ni silicide to minimize the leakage current in metal-induced crystallized polycrystalline silicon thin-film transistors

✍ Chang Woo Byun, Se Wan Son, Yong Woo Lee, Hyun Mo Kang, Seol Ah Park, Woo Chang 📂 Article 📅 2012 🏛 The Korean Institute of Metals and Materials 🌐 English ⚖ 650 KB