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Hot-electron-induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon

โœ Scribed by Toyama, Toshihiko; Hiratsuka, Kazuhiro; Okamoto, Hiroaki; Hamakawa, Yoshihiro


Book ID
121293155
Publisher
American Institute of Physics
Year
1995
Tongue
English
Weight
772 KB
Volume
77
Category
Article
ISSN
0021-8979

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Electron deep-trapping mobility-lifetime (/~r) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting /~r estimate upon the collection time was observed. The corre