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18 MeV electron irradiation-induced metastability in hydrogenated amorphous silicon

✍ Scribed by P. Danesh; B. Pantchev; E. Vlaikova


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
109 KB
Volume
239
Category
Article
ISSN
0168-583X

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Conductivity effects in hydrogenated amo
✍ S. Baccaro; G. De Cesare; G. Maiello; G. Masini; M. Montecchi; M. Petti; A. Ferr πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 235 KB

Hydrogenated amorphous silicon films 0.45 and 1.12/~m thick, grown by RF glow discharge plasma PECVD on Coming-7059 glass, were irradiated by a 6Β°Co source (activity 2.8 Γ— 1015 Bq) in the dose range 10-450 kGy at different dose rates. The dark current of the samples, under 100 V appfied voltage, was