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Electron transport in hydrogenated amorphous silicon: drift mobility and junction capacitance

โœ Scribed by T. Tiedje; C.R. Wronski; B. Abeles; J.M. Cebulka


Publisher
Elsevier Science
Year
1980
Weight
888 KB
Volume
2
Category
Article
ISSN
0379-6787

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Junction capacitance studies of deep def
โœ J.D. Cohen; A.V. Gelatos; K.K. Mahavadi; K. Zellama ๐Ÿ“‚ Article ๐Ÿ“… 1988 ๐Ÿ› Elsevier Science โš– 630 KB

Recent results obtained by applying two methods, drive-level capacitance profiling and transient photocapacitance spectroscopy, to the study of deep defects in undoped hydrogenated amorphous silicon (a-Si:H) are reviewed. From the first method, we illustrate how it is possible to obtain the density,