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Homoepitaxial growth of GaN using molecular beam epitaxy

✍ Scribed by Gassmann, A.; Suski, T.; Newman, N.; Kisielowski, C.; Jones, E.; Weber, E. R.; Liliental‐Weber, Z.; Rubin, M. D.; Helava, H. I.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

Book ID: 118122014
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 419 KB
Volume: 80
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.363112

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