Hole mobility in heavily Zn-doped GaAs
✍ Scribed by Dr. E. Nowak; Dr. H. Neumann; Prof. Dr. G. Kühn
- Publisher
- John Wiley and Sons
- Year
- 1989
- Tongue
- English
- Weight
- 219 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0232-1300
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📜 SIMILAR VOLUMES
Zinc delta-doped GaAs and pseudomorphic GaAs/In 0.2 Ga 0.8 As heterostructures grown by low-pressure metalorganic chemical vapour deposition have been demonstrated. The influence of delta-doping period and spacer thickness on two-dimensional hole gas concentrations and hole mobility was studied. Fro
## Abstract The electrical parameters of Zn‐doped GaAs liquid phase epitaxial layers are determined in the temperature range from 77 to 300 K by Hall effect and resistivity measurements. An analysis of the experimental data yields an ionization energy of 30.4 meV for the Zn acceptor in GaAs in the