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Band tail conduction in Zn-doped GaAs

✍ Scribed by Dr. H. Neumann; Dr. B. Jacobs; Dr. W. Hörig

Publisher
John Wiley and Sons
Year
1990
Tongue
English
Weight
302 KB
Volume
25
Category
Article
ISSN
0232-1300

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✦ Synopsis

Abstract

The electrical parameters of Zn‐doped GaAs liquid phase epitaxial layers are determined in the temperature range from 77 to 300 K by Hall effect and resistivity measurements. An analysis of the experimental data yields an ionization energy of 30.4 meV for the Zn acceptor in GaAs in the dilute limit of acceptor concentration. For the Mott transition a critical hole concentration of about 6 · 10^17^ cm^−3^ is estimated. It is found that the temperature dependence of the electrical parameters is essentially influenced by band tail conduction effects at doping levels above the Mott transition.

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