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High-yield GaN nanowire synthesis and field-effect transistor fabrication

✍ Scribed by Huaqiang Wu; Ho-Young Cha; M. Chandrashekhar; Michael G. Spencer; Goutam Koley

Book ID
107453628
Publisher
Springer US
Year
2006
Tongue
English
Weight
265 KB
Volume
35
Category
Article
ISSN
0361-5235

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## Abstract The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO~2~ deposition. The interface state density (__D__~it~) of samples annealed at 900–1000 Β°C was estimated to be ∼2 Γ— 10^11^ cm^–2^ eV^–1^ at 0.2 eV under the conduction