A High-Power GaN-Based Field-Effect Transistor for Large-Current Operation

✍ Scribed by Yoshida, S. ;Ishii, H.

• Publisher: John Wiley and Sons
• Year: 2001
• Tongue: English
• Weight: 79 KB
• Volume: 188
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/1521-396x(200111)188:1<243::aid-pssa243>3.0.co;2-x