High-quality SiO2/GaN interface for enhanced operation field-effect transistor

✍ Scribed by Niiyama, Yuki ;Shinagawa, Tatsuyuki ;Ootomo, Shinya ;Kambayashi, Hiroshi ;Nomura, Takehiko ;Yoshida, Seikoh

• Book ID: 105364252
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 151 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674844

✦ Synopsis

Abstract

The interface quality in GaN metal–oxide–semiconductor (MOS) capacitors was dramatically improved by annealing after SiO~2~ deposition. The interface state density (D~it~) of samples annealed at 900–1000 °C was estimated to be ∼2 × 10^11^ cm^–2^ eV^–1^ at 0.2 eV under the conduction band based on the calculation of the Terman method. Using this SiO~2~, it is expected that GaN MOSFETs can be operated. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)