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High-transconductance graphene solution-gated field effect transistors

✍ Scribed by Hess, L. H.; Hauf, M. V.; Seifert, M.; Speck, F.; Seyller, T.; Stutzmann, M.; Sharp, I. D.; Garrido, J. A.

Book ID
120811302
Publisher
American Institute of Physics
Year
2011
Tongue
English
Weight
923 KB
Volume
99
Category
Article
ISSN
0003-6951

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The