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Side-gate graphene field-effect transistors with high transconductance

✍ Scribed by Hähnlein, B.; Händel, B.; Pezoldt, J.; Töpfer, H.; Granzner, R.; Schwierz, F.


Book ID
120176078
Publisher
American Institute of Physics
Year
2012
Tongue
English
Weight
598 KB
Volume
101
Category
Article
ISSN
0003-6951

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## Abstract Three types of first generation epitaxial graphene (EG) field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the carbon and silicon faces of hexagonal silicon carbide and patterned with electron beam lithography. The