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High-temperature performance of AlGaN/GaN HFETs on SiC substrates

✍ Scribed by Gaska, R.; Chen, Q.; Yang, J.; Osinsky, A.; Asif Khan, M.; Shur, M.S.


Book ID
118260460
Publisher
IEEE
Year
1997
Tongue
English
Weight
75 KB
Volume
18
Category
Article
ISSN
0741-3106

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Low 1/f Noise in AlGaN/GaN HFETs on SiC
✍ Rumyantsev, S. ;Levinshtein, M. E. ;Gaska, R. ;Shur, M. S. ;Khan, A. ;Yang, J. W πŸ“‚ Article πŸ“… 1999 πŸ› John Wiley and Sons 🌐 English βš– 139 KB πŸ‘ 2 views

Experimental results of the low-frequency noise measurements on a large number of different AlGaN/GaN High Electron Mobility Transistors (HEMTs) grown on sapphire and SiC substrates have been presented. In the HEMTs grown on sapphire, the 1af noise is an order of magnitude (or more) higher than for