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High temperature long term stability of SiC Schottky diodes

✍ Scribed by A. Testa; S. De Caro; S. Russo; D. Patti; L. Torrisi

Book ID
113800545
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
737 KB
Volume
51
Category
Article
ISSN
0026-2714

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✍ E. Vittone; V. Rigato; P. Olivero; F. Nava; C. Manfredotti; A. LoGiudice; Y. Gar πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 395 KB

Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for