✦ LIBER ✦

Characterization of SiC Schottky diodes at different temperatures

✍ Scribed by Ozpineci, B.; Tolbert, L.M.

Book ID: 114573665
Publisher: IEEE
Year: 2003
Tongue: English
Weight: 565 KB
Volume: 1
Category: Article
ISSN: 1540-7985
DOI: 10.1109/lpel.2003.821026

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electrical characterizations of Neutron-

Electrical characterizations of Neutron-irradiated SiC Schottky diodes

✍ Geunwoo Ko; Hong-Yeol Kim; Joona Bang; Jihyun Kim 📂 Article 📅 2009 🏛 Springer US 🌐 English ⚖ 257 KB

Hydrogen sensing characteristics of Pd-S

Hydrogen sensing characteristics of Pd-SiC schottky diode operating at high temperature

✍ C. K. Kim; J. H. Lee; Y. H. Lee; N. I. Cho; D. J. Kim; W. P. Kang 📂 Article 📅 1999 🏛 Springer US 🌐 English ⚖ 128 KB

High temperature long term stability of

High temperature long term stability of SiC Schottky diodes

✍ A. Testa; S. De Caro; S. Russo; D. Patti; L. Torrisi 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 737 KB

Characterization of Ti schottky diodes o

Characterization of Ti schottky diodes on epi-regrown 4H-SiC

✍ Lin Zhu; Canhua Li; T. Paul Chow; Ishwara B. Bhat; Kenneth A. Jones; C. Scozzie; 📂 Article 📅 2006 🏛 Springer US 🌐 English ⚖ 133 KB

Temperature dependent IBIC study of 4H–S

Temperature dependent IBIC study of 4H–SiC Schottky diodes

✍ E. Vittone; V. Rigato; P. Olivero; F. Nava; C. Manfredotti; A. LoGiudice; Y. Gar 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 395 KB

Ion beam induced charge collection measurements have been performed on an epitaxial 4H-SiC Schottky diode with a focussed 1.5 MeV H beam in the temperature range of 120-380 K. The experimental procedure consisted in measuring the charge collection efficiency (CCE) at different bias voltages (V) for

Properties of GaP Schottky barrier diode

Properties of GaP Schottky barrier diodes at elevated temperatures

✍ Y. Nannichi; G.L. Pearson 📂 Article 📅 1969 🏛 Elsevier Science 🌐 English ⚖ 486 KB