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High temperature crystallized poly-Si on Mo substrates for TFT application

โœ Scribed by Joong Hyun Park; Do Young Kim; Jae Kyung Ko; K. Chakrabarty; Junsin Yi

Book ID
108388547
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
213 KB
Volume
427
Category
Article
ISSN
0040-6090

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๐Ÿ“œ SIMILAR VOLUMES

Low temperature poly-Si TFTs for display
Low temperature poly-Si TFTs for display application
โœ In-Hyuk Song; Min-Koo Han ๐Ÿ“‚ Article ๐Ÿ“… 2003 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 240 KB

We have fabricated new polycrystalline silicon (poly-Si) thin film transistors (TFTs) with a single grain-boundary by a simple excimer laser annealing (ELA) method which employs a selectively floating amorphous silicon (a-Si) active layer and Al patterns. A thermally insulating air-gap between the f