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High-resolution X-ray diffraction and X-ray standing wave analyses of (AlAs)m(GaAs)n short-period superlattices

✍ Scribed by Schuster, M; Lessmann, A; Munkholm, A; Brennan, S; Materliks, G; Riechert, H


Book ID
111924708
Publisher
Institute of Physics
Year
1995
Tongue
English
Weight
447 KB
Volume
28
Category
Article
ISSN
0022-3727

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X-Ray Diffraction Analysis of the In/Ga
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Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice