✦ LIBER ✦

High-resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires

✍ Scribed by Kawamura, T.; Bhunia, S.; Watanabe, Y.; Fujikawa, S.; Matsui, J.; Kagoshima, Y.; Tsusaka, Y.

Book ID: 120003506
Publisher: American Institute of Physics
Year: 2005
Tongue: English
Weight: 441 KB
Volume: 97
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1863418

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-resolution X-ray diffraction invest

High-resolution X-ray diffraction investigations of epitaxially grown ZnSe/GaAs layers

✍ Wolf, K; Jilka, S; Rosenauer, A; Schutz, G; Stanzl, H; Reisinger, T; Gebhardt, W 📂 Article 📅 1995 🏛 Institute of Physics 🌐 English ⚖ 437 KB

High-resolution x-ray-diffraction analys

High-resolution x-ray-diffraction analysis of epitaxially grown yttrium iron garnet films on gadolinium gallium garnet

✍ Dimer, M.; Gerdau, E.; RuÌffer, R.; RuÌter, H. D.; Sturhahn, W. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 306 KB

High-resolution X-ray diffraction study

High-resolution X-ray diffraction study of ZnSeGaAs heterostructures grown by molecular beam epitaxy

✍ I.K. Sou; S.M. Mou; Y.W. Chan; G.C. Xu; G.K.L. Wong 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 525 KB

High-resolution X-ray diffraction studie

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

✍ R. H. Sewell; C. A. Musca; J. M. Dell; L. Faraone; B. F. Usher; T. Dieing 📂 Article 📅 2005 🏛 Springer US 🌐 English ⚖ 247 KB

High-resolution X-ray diffraction study

High-resolution X-ray diffraction study of CZ-grown GaAsP crystals

✍ Kowalski, G. ;Gronkowski, J. ;Czyżak, A. ;Słupiński, T. ;Borowski, J. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 354 KB

## Abstract We report results of X‐ray investigations of tellurium‐doped GaAs~1–__x__~ P~__x__~ (with 0.07 ≤ __x__ ≤ 0.20) single crystals, conducted in order to support finding proper growth parameters which would yield a material of sufficient homogeneity of the lattice parameter for prospective

High-resolution x-ray diffraction study

High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature

✍ N. N. Faleev; V. V. Chaldyshev; A. E. Kunitsyn; V. V. Tret’yakov; V. V. Preobraz 📂 Article 📅 1998 🏛 Springer 🌐 English ⚖ 125 KB