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High resolution x-ray analysis of pseudomorphic InGaN/GaN multiple quantum wells: Influence of Si doping concentration

✍ Scribed by Cho, Yong-Hoon; Fedler, F.; Hauenstein, R. J.; Park, G. H.; Song, J. J.; Keller, S.; Mishra, U. K.; DenBaars, S. P.

No coin nor oath required. For personal study only.

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