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High-resolution sputter depth profiling with a low pressure hf plasma

✍ Scribed by Stumpe, E. ;Oechsner, H. ;Schoof, H.


Publisher
Springer
Year
1979
Tongue
English
Weight
642 KB
Volume
20
Category
Article
ISSN
1432-0630

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High Depth Resolution SIMS Analysis with
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By the use of a deceleration electrode in the primary beam line of a magnetic sector SIMS instrument, an O 2 primary beam of variable energy and angle has been produced. The SIMS measurements of ultrathin Ge and B layers in Si were performed with low-energy (0.7-2 keV) and grazingly incident (50-75Γ„