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High-resolution rutherford backscattering spectrometry of metal-silicon interfaces

โœ Scribed by J.F. Van Der Veen; E.J. Van Loenen


Publisher
Elsevier Science
Year
1986
Weight
46 KB
Volume
168
Category
Article
ISSN
0167-2584

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The potential of high resolution Rutherford Backscattering (RBS) for identification and quantification of trace elements in thin films was investigated. A beam of 250 keV d + ions from the AN700 van de Graaff accelerator in Linz was used to characterize the composition of an organic multi-element co