## Abstract Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in ato
High-resolution electron-microscopy study of 60°-Dislocations in Cu
✍ Scribed by Weiler, B. ;Sigle, W. ;Seeger, A.
- Publisher
- John Wiley and Sons
- Year
- 1995
- Tongue
- English
- Weight
- 376 KB
- Volume
- 150
- Category
- Article
- ISSN
- 0031-8965
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