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Contrast and resolution of small dislocation loops in high-voltage electron microscopy

✍ Scribed by Chen, L. J. ;Seshan, K. ;Thomas, G.

Publisher
John Wiley and Sons
Year
1975
Tongue
English
Weight
632 KB
Volume
28
Category
Article
ISSN
0031-8965

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Dislocations in silicon observed by high
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## Abstract Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in ato