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High resolution electron microscopy of a Σ = 27 boundary in silicon

✍ Scribed by B. Cunningham; H.P. Strunk; D.G. Ast


Book ID
116060887
Publisher
Elsevier Science
Year
1982
Weight
295 KB
Volume
16
Category
Article
ISSN
0036-9748

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## Abstract Dislocations in deformed silicon crystals have been studied by high‐resolution electron microscopy with the axial illumination along the [110] direction using a 1 MV electron microscope. Extended 60 dislocations, Z‐shape faulted dipoles and stacking fault tetrahedra were observed in ato