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High-resolution channeling contrast microscopy of compositionally graded Si1−XGeX layers

✍ Scribed by H.L. Seng; T. Osipowicz; T.C. Sum; M.B.H. Breese; F. Watt; E.S. Tok; J. Zhang

Book ID
114167401
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
586 KB
Volume
210
Category
Article
ISSN
0168-583X

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Strain relaxed Si 1Àx Ge x virtual substrates with low densities of threading dislocations are grown by molecular beam epitaxy or chemical vapour deposition using the compositional grading technique. They have a wide range of applications in microelectronic and optoelectronic devices. A common surfa