Observation of local lattice tilts in strain-relaxed Si1-xGexusing high resolution channeling contrast microscopy

Determination of local lattice tilt in S

Determination of local lattice tilt in Si1−xGex virtual substrate using high resolution channeling contrast microscopy

✍ H.L. Seng; T. Osipowicz; J. Zhang; E.S. Tok; F. Watt 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 404 KB

Strain relaxed Si 1Àx Ge x virtual substrates with low densities of threading dislocations are grown by molecular beam epitaxy or chemical vapour deposition using the compositional grading technique. They have a wide range of applications in microelectronic and optoelectronic devices. A common surfa