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Characterization of highly boron-doped Si, Si1 − xGex and Ge layers by high-resolution transmission electron microscopy

✍ Scribed by H.H. Radamson; K.B. Joelsson; W.-X. Ni; L. Hultman; G.V. Hansson


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
304 KB
Volume
157
Category
Article
ISSN
0022-0248

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