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High quantum efficiency InP mesas grown by hybrid epitaxy on Si substrates

✍ Scribed by R.F. Schnabel; M. Grundmann; R. Engelhardt; J. Oertel; A. Krost; D. Bimberg; R. Opitz; M. Schmidbauer; R. Köhler

Book ID
103168449
Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
588 KB
Volume
156
Category
Article
ISSN
0022-0248

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A single nominally lattice matched GalnAs quantum well (QW)/quantum wire (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVPE) in Vgrooved lnP substrates. Different SiO2 etch masks with opening widths from 2/tin down to 200 nm (for application as second order DFB grating) were define