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High quality InAlAs grown on InP substrates by molecular beam epitaxy at very high arsenic overpressures

✍ Scribed by S. F. Yoon; Y. B. Miao; K. Radhakrishnan; S. Swaminathan

Book ID: 104695134
Publisher: Springer
Year: 1995
Tongue: English
Weight: 234 KB
Volume: 14
Category: Article
ISSN: 0261-8028
DOI: 10.1007/bf00270733

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