Molecular beam epitaxial growth of high quality InAlAs on InP (100) substrates at very high arsenic pressures

✍ Scribed by S.F. Yoon; Y.B. Miao; K. Radhakrishnan

• Publisher: Elsevier Science
• Year: 1996
• Tongue: English
• Weight: 312 KB
• Volume: 279
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/0040-6090(96)08835-9