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High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

✍ Scribed by Shekari, L.; Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z.

Book ID: 119192558
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 769 KB
Volume: 263
Category: Article
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2012.07.164

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