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Morphological, structural and optical properties of GaN grown on porous silicon/Si(100) substrate

✍ Scribed by A. Matoussi; F. Ben Nasr; R. Salh; T. Boufaden; S. Guermazi; H.-J. Fitting; B. Eljani; Z. Fakhfakh

Book ID: 113791288
Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 808 KB
Volume: 62
Category: Article
ISSN: 0167-577X
DOI: 10.1016/j.matlet.2007.05.079

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## Abstract The cover picture of the present issue of physica status solidi (a) contains two scanning electron micrographs showing approximately 40 nm diameter Ge nanowires grown by the vapor–liquid–solid (VLS) technique on Si(100) (upper right figure) and Si(111) (lower left figure) substrates, re