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High power silicon RF LDMOSFET technology for 2.1 GHz power amplifier applications

✍ Scribed by Xu, S.; Baiocchi, F.; Safar, H.; Lott, J.; Shibib, A.; Xie, Z.; Nigam, T.; Jones, B.; Thompson, B.; Desko, J.; Gammel, P.

Book ID: 114447991
Publisher: The Institution of Electrical Engineers
Year: 2004
Tongue: English
Weight: 459 KB
Volume: 151
Category: Article
ISSN: 1350-2409
DOI: 10.1049/ip-cds:20040455

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