CMOS stacked folded differential structure power amplifier for high power RF application

✍ Scribed by Yohann Luque; Eric Kerhervé; Nathalie Deltimple; Laurent Leyssenne; Didier Belot

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 788 KB
• Volume: 20
• Category: Article
• ISSN: 1096-4290
• DOI: 10.1002/mmce.20465

✦ Synopsis

This article describes the feasibility of a Power Amplifier (PA) in 0.13 lm CMOS technology from STMicroelectronics for high power applications. To obtain a high output power with a good linearity, a new topology called Stacked Folded Differential Structure (SFDS) is proposed. It allows obtaining similar power performances to a PA with DAT in a lower die area. This PA provides 23 dBm of maximum output power (P max ) with 20% of power added efficiency (PAE) at 1.95 GHz. The linear gain is equal to 11 dB and the output power at 1 dB compression point (OCP 1 ) achieves 21 dBm.