In this study, we propose the fabrication of amorphous SrInZnO (SIZO) thin film transistors (TFTs) using a solution process. To analyze the effects of Sr incorporation and annealing temperature on solutionprocessed amorphous SIZO TFTs, Hall measurements, thermogravimetry-differential thermal analysi
โฆ LIBER โฆ
High-performance solution-processed amorphous ZrInZnO thin-film transistors
โ Scribed by Ya-Wei Chung; Fang-Chung Chen; Ying-Ping Chen; Yu-Ze Chen; Yu-Lun Chueh
- Book ID
- 115561685
- Publisher
- John Wiley and Sons
- Year
- 2012
- Tongue
- English
- Weight
- 305 KB
- Volume
- 6
- Category
- Article
- ISSN
- 1862-6254
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## Abstract The electrical and chemical stability of solutionโprocessed pentacene thin film transistors (TFTs) was investigated using analytical models reported by Horowitz et al. in comparison with vacuumโdeposited TFTs. The estimated total trap density of the solutionโprocessed film was one to tw