𝔖 Bobbio Scriptorium
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Benzodithiophene Copolymer—A Low-Temperature, Solution-Processed High-Performance Semiconductor for Thin-Film Transistors

✍ Scribed by H. Pan; Y. Wu; Y. Li; P. Liu; B. S. Ong; S. Zhu; G. Xu


Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
250 KB
Volume
17
Category
Article
ISSN
1616-301X

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W and L are, respectively, the semiconductor channel width and length, C i is the capacitance per unit area of the gate dielectric layer, and V G and V T are, respectively, the gate voltage and threshold voltage. V T of the device was determined from the relationship between the square root of I SD