High-performance planar inductor on thick oxidized porous silicon (OPS) substrate
β Scribed by Choong-Mo Nam, ; Young-Se Kwon
- Book ID
- 120933959
- Publisher
- IEEE
- Year
- 1997
- Tongue
- English
- Weight
- 59 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1051-8207
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## Abstract In this paper, the effects of the thickness of silicon substrate with backside metalization on inductor performance are investigated, and the experimental results show that thinner substrate with backside metalization results in smaller inductance, lower quality factor, and slightly hig
Spiral inductors ha¨e been e¨aluated on Si substrates by inserting a porous Si layer for the application of MMICs. This high-resis-ti¨e porous Si layer pro¨ides a low substrate loss and a low coupling effect. Spiral inductors fabricated on this layer achie¨e better Q-and inductance ¨alues. A 9.7 nH